bcx51 bcx52 bcx53 surface mount pnp silicon transistor description: the central semiconductor bcx51, bcx52, and bcx53 types are pnp silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. marking code: see marking code table on following page maximum ratings: (t a =25c) symbol bcx51 bcx52 bcx53 units collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.0 a peak collector current i cm 1.5 a continuous base current i b 100 ma peak base current i bm 200 ma power dissipation p d 1.3 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 96 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =30v 100 na i cbo v cb =30v, t a =125c 10 a i ebo v eb =5.0v 100 na bv cbo i c =100a (bcx51) 45 v bv cbo i c =100a (bcx52) 60 v bv cbo i c =100a (bcx53) 100 v bv ceo i c =10ma (bcx51) 45 v bv ceo i c =10ma (bcx52) 60 v bv ceo i c =10ma (bcx53) 80 v v ce(sat) i c =500ma, i b =50ma 0.5 v v be(on) v ce =2.0v, i c =500ma 1.0 v h fe v ce =2.0v, i c =5.0ma 40 h fe v ce =2.0v, i c =150ma 63 250 h fe v ce =2.0v, i c =150ma (bcx51-10, bcx52-10, BCX53-10) 63 160 h fe v ce =2.0v, i c =150ma (bcx51-16, bcx52-16, bcx53-16) 100 250 h fe v ce =2.0v, i c =500ma 25 f t v ce =5.0v, i c =10ma, f=100mhz 50 mhz sot-89 case r5 (20-november 2009) www.centralsemi.com
bcx51 bcx52 bcx53 surface mount pnp silicon transistor sot-89 case - mechanical outline lead code: 1) emitter 2) collector 3) base (bottom view) device marking code bcx51 aa bcx51-10 ac bcx51-16 ad bcx52 ae bcx52-10 ag bcx52-16 am bcx53 ah BCX53-10 ak bcx53-16 al www.centralsemi.com r5 (20-november 2009)
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